Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor depositionDI FORTE-POISSON, M. A; BRYLINSKI, C; DUCHEMIN, J. P et al.Applied physics letters. 1985, Vol 46, Num 5, pp 476-478, issn 0003-6951Article

Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAsDI FORTE-POISSON, M. A; BRYLINSKI, C; PONS, D et al.Revue technique - Thomson-CSF. 1994, Vol 26, Num 2, pp 403-418, issn 0035-4279Article

Selected area growth of InP by low pressure metalorganic chemical vapor deposition on ion implanted InP substratesFAVENNEC, P. N; SALVI, M; DI FORTE POISSON, M. A et al.Applied physics letters. 1983, Vol 43, Num 8, pp 771-773, issn 0003-6951Article

III-Nitrides semiconductor compounds for microwave devicesDI FORTE-POISSON, M. A; MAGIS, M; SARAZIN, N et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 185-193, issn 0031-8965, 9 p.Conference Paper

Two-dimensional persistent photoconductivity and magnetic freeze-out in lightly δ-doped InPLAVIELLE, D; PORTAL, J. C; DI FORTE-POISSON, M. A et al.Surface science. 1990, Vol 229, Num 1-3, pp 119-121, issn 0039-6028, 3 p.Conference Paper

Variable-range hopping in compensated epitactic n-InPBENZAQUEN, M; MAZURUK, K; WALSH, D et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 31, pp L1007-L1010, issn 0022-3719Article

Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gateRAULIN, J. Y; THORNGREN, E; DI FORTE-POISSON, M. A et al.Applied physics letters. 1987, Vol 50, Num 9, pp 535-536, issn 0003-6951Article

Thermal stability of Mo-based schottky contact for AlGaN/GaN HEMTSOZZA, A; DUA, C; MORVAN, E et al.Electronics Letters. 2005, Vol 41, Num 16, pp 927-928, issn 0013-5194, 2 p.Article

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInNREDONDO-CUBERO, A; LORENZ, K; GAGO, R et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 5, issn 0022-3727, 055406.1-055406.5Article

Aluminium incorporation in Al_xGa_l-xN/GaN heterostructures : A comparative study by ion beam analysis and X-ray diffractionREDONDO-CUBERO, A; GAGO, R; GONZALEZ-POSADA, F et al.Thin solid films. 2008, Vol 516, Num 23, pp 8447-8452, issn 0040-6090, 6 p.Article

Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistorPLANA, R; GRAFFEUIL, J; DELAGE, S. L et al.Electronics Letters. 1992, Vol 28, Num 25, pp 2354-2356, issn 0013-5194Article

Boron implantation into GaAs/Ga_0.5In_0.5P heterostructuresHENKEL, A; DELAGE, S. L; DI FORTE-POISSON, M. A et al.Japanese journal of applied physics. 1997, Vol 36, Num 1A, pp 175-180, issn 0021-4922, 1Article

First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBTDELAGE, S. L; DI FORTE-POISSON, M. A; BLANCK, H et al.Electronics Letters. 1991, Vol 27, Num 3, pp 253-254, issn 0013-5194, 2 p.Article

Magnetophonon resonance in n⁺n^-n⁺ InP up to 40 TYAMADA, K; MIURA, N; EAVES, L et al.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 895-901, issn 0268-1242Article

Structural characterisation of GaAlN/GaN HEMT heterostructuresSARAZIN, N; DURAND, O; MAGIS, M et al.Applied surface science. 2006, Vol 253, Num 1, pp 228-231, issn 0169-4332, 4 p.Conference Paper

A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InPHOPKINS, M. A; NICHOLAS, R. J; PFEFFER, P et al.Semiconductor science and technology. 1987, Vol 2, Num 9, pp 568-577, issn 0268-1242Article

Ga_1-xIn_xAs/InAs_yP_1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVDDI FORTE-POISSON, M. A; BRYLINSKI, C; DI PERSIO, J et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 782-791, issn 0022-0248Conference Paper

Low microwave noise of AIGaN/GaN HEMTs fabricated on SiCopSiC substratesHOEL, V; DEFRANCE, N; DOUVRY, Y et al.Electronics letters. 2010, Vol 46, Num 1, pp 84-85, issn 0013-5194, 2 p.Article

Characteristics of Al₂O₃/AlInN/GaN MOSHEMTMEDJDOUB, F; SARAZIN, N; TORDJMAN, M et al.Electronics Letters. 2007, Vol 43, Num 12, pp 691-692, issn 0013-5194, 2 p.Article

TEM investigation of defect structure in GaAlN/GaN heterostructuresMAKKAI, Zs; PECZ, B; DI FORTE-POISSON, M. A et al.Vacuum. 2003, Vol 71, Num 1-2, pp 159-163, issn 0042-207X, 5 p.Conference Paper

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxyDI FORTE-POISSON, M. A; HUET, F; ROMANN, A et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 314-318, issn 0022-0248Conference Paper

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVDDI FORTE POISSON, M.-A; SARAZIN, N; MAGIS, M et al.Journal of crystal growth. 2007, Vol 298, pp 826-830, issn 0022-0248, 5 p.Conference Paper

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHzSARAZIN, N; MORVAN, E; DI FORTE POISSON, M. A et al.IEEE electron device letters. 2010, Vol 31, Num 1, pp 11-13, issn 0741-3106, 3 p.Article

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiCGAMARRA, P; LACAM, C; TORDJMAN, M et al.Journal of crystal growth. 2013, Vol 370, pp 282-287, issn 0022-0248, 6 p.Conference Paper

LPMOCVD growth of GaN on silicon carbideDI FORTE-POISSON, M.-A; ROMANN, A; TORDJMAN, M et al.Journal of crystal growth. 2003, Vol 248, pp 533-536, issn 0022-0248, 4 p.Conference Paper